RAM: Difference between revisions

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== PS2 Compatibility Memory ==
== PS2 Compatibility Memory ==
 
See: [[PS2 Compatibility]]
=== Samsung K4R271669F or K4R271669H ===
 
<div style="float:right">[[File:K4R271669F.png|200px|thumb|left|54-ball FBGA<br />Samsung K4R271669F]]</div>
 
Datasheet: [http://www.samsung.com/global/system/business/semiconductor/product/2007/6/11/XDR_RDRAM/RDRAM/Component/128MbitConsumer/K4R271669H/ds_k4r271669h_rev10.pdf Samsung K4R271669F]
 
The earlier models with hardware PS2 compatibility also contained an extra 32MB of RDRAM using two 16MB Samsung chips.
 
{| border="1" cellspacing="0" cellpadding="5" border="#999" class="wikitable" style="border:1px solid #999; border-collapse: collapse;"
|- bgcolor="#cccccc"
! Type !! Size !! Speed !! Voltage !! Packaging !! Manufacturer !! Serial Number !! Description
|-
| RDRAM || 16MB || 800MHz || 2.50 +/- 0.13V || 54-pin || Samsung || K4R271669F || 32MB total (2 chips) for Hardware PS2 Compatibility System Memory
|-
|}
:

Revision as of 14:37, 25 July 2011

Main System Memory

The PS3 has 256MB of 64 bit bus Rambus XDR main system memory. Some models use four 64MB Samsung chips, while other models uses four 64MB Elpida chips.

A sample of the Memory chips in different PS3 models:

Type Size Speed Voltage Packaging Manufact. Serial Number Amount Models
Rambus XDR 64MB 400MHz 1.8V+/-0.09V FBGA-104 Elpida X5116AC-SE-3C-E 4x CECHA/COK-001 up to including CECHG/SEM-001
Rambus XDR 64MB 400MHz 1.8V+/-0.09V FBGA-104 Samsung K4Y50164UC-JCB3 4x ?Some initial models?
Rambus XDR 64MB 400MHz 1.8V+/-0.09V FBGA-100 Samsung K4Y50164UE-JCB3 4x CECHJ/DIA-002 and CECHK/DIA-002
Rambus XDR 64MB 400MHz 1.8V+/-0.09V FBGA-104 Elpida X5116ADSE-3C-E 4x CECHH/DIA-001, CECHL/VER-001 up and including CECHQ/VER-001 and PS3 Slim CECH-20..A/DYN-001
Rambus XDR 128MB 400MHz 1.5V+/-0.075V FBGA-150 Elpida X1032BASE-3C-F 2x CECH-21..A/SUR-001

Elpida X5116AC-SE-3C-E

104-ball FBGA
Elpida X5116AC-SE-3C-E

Datasheet: Elpida X5116AC-SE-3C-E

productcode meaning:
E - Elpida Memory
D - Type : Monolithic Device
X - Product Family : XDR RAM
51 - Density : 512M (x16bit)
16 - Organisation : x16bit
A - Supply Voltage : 1.8V, DRSL
C - Die Revision: C
SE - Package : FBGA (with back cover)
-
3C - Speed : 3.2G (tRAC = 35, C Bin)
-
E - Environmental Code : Lead Free


Samsung K4Y50164UC-JCB3

104-ball FBGA
Samsung K4Y50164UC-JCB3

Datasheet: Samsung K4Y50164UC-JCB3

productcode meaning:
K - Samsung Memory
4 - DRAM
Y - Product : XDR RAM
50 - Density : 512M, 32K/16ms(0,49us)
16 - Organisation : x16
4 - Banks : 8
U - Interface : DRSL(1.8V, 1.2V)
C - Generation : 4th
-
J - Packagetype: BOC lead free
C - Temperature & Power: Commercial, Normal Power
B3 - Speed (Data frequency, tRAC, tRC) : 3.2Gbps, 35ns, 24cycles

Samsung K4Y50164UE-JCB3

(CECHG,CECHK)

100-ball FBGA
Samsung K4Y50164UE-JCB3

Datasheet: Samsung K4Y50164UE-JCB3

productcode meaning:
K - Samsung Memory
4 - DRAM
Y - Product : XDR RAM
50 - Density : 512M, 32K/16ms(0,49us)
16 - Organisation : x16
4 - Banks : 8
U - Interface : DRSL(1.8V, 1.2V)
E - Generation : 6th
-
J - Packagetype: BOC lead free
C - Temperature & Power: Commercial, Normal Power
B3 - Speed (Data frequency, tRAC, tRC) : 3.2Gbps, 35ns, 24cycles

Elpida X5116ADSE-3C-E

(CECH-20xx)

104-ball FBGA
Elpida X5116ADSE-3C-E

Datasheet: Elpida X5116ADSE-3C-E

productcode meaning:
X - Product Family : XDR RAM
51 - Density : 512M (x16bit)
16 - Organisation : x16bit
A - Supply Voltage : 1.8V, DRSL
D - Die Revision: D
SE - Package : FBGA (with back cover)
-
3C - Speed : 3.2G (tRAC = 35, C Bin)
-
E - Environmental Code : Lead Free

Elpida X1032BASE-3C-F

(CECH-21xx and later)

Datasheet: E1332E50 (EOL)

productcode meaning:
E - Elpida Memory
D - Type : Monolithic Device
X - Product Family : XDR RAM
13 - Density : 1Gbit (128MB) 32Mbitx32 
32 - Organisation : x32bit
B - Supply Voltage : 1.5V +/- 0.075V, DRSL
A - Die Revision: A
SE - Package : FBGA (with back cover)
-
3C - Speed : 3.2G (tRAC = 35, C Bin)
-
F - Environmental Code : Lead & Halogen Free

Graphics Memory

RSX bare die
GPU in centre
4x GDDR3

The 256MB of GDDR3 memory is located inside the RSX chip using four 64MB FBGA chips.

Type Size Speed Voltage Packaging Manufacturer Serial Number Description
GDDR3 64MB (512Mbit) 700MHz 2.0V +/-0.1V FBGA-136 on-die Samsung K4J52324QC-SC14 256MB total (4 chips) for PS3 Graphics Memory
GDDR3 64MB (512Mbit_ 700MHz 2.0V +/-0.1V FBGA-136 on-die Qimonda HYB18H512322AF-14 256MB total (4 chips) for PS3 Graphics Memory (later models)


Samsung K4J52324QC-SC14

FBGA-136 / on-die
Samsung K4J52324QC-SC14

Datasheet: Samsung K4J52324QC-SC14

productcode meaning:
K - Samsung Memory
4 - DRAM
J - Product : GDDR3 RAM
52 - Density : 512M, 32ms, 8K
32 - Organisation : x32
4 - Banks : 8
Q - Interface : DRSL(1.8V, 1.2V)
C - Generation : 4th
-
S - Packagetype: BOC lead
C - Temperature & Power: Commercial, Normal Power (1.8V +/- 0.1V)
14 - Speed (Data frequency, tRAC, tRC) : 1.4Gbps


Qimonda HYB18H512322AF-14

FBGA-136 / on-die
Qimonda HYB18H512322AF-14

datasheet: unavailable

productcode meaning:
H
Y
B
1
8
H
512 - Density : 512M (16M x 32)
32 - Organisation : x32
2
A
F
-
14- Speed (Data frequency, tRAC, tRC) : 1.4Gbps


PS2 Compatibility Memory

See: PS2 Compatibility