Talk:Hardware flashing

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NAND

NAND (256MB, old FAT models, needs 32 wires, 15 per NAND + GND + VCC)
2 chips: Samsung K9F1G08U0A-PIB0

NOR

NOR 16MB, newer FAT models + Slims
needs 44 I/O wires: 23 address lines:A0-A22 + 16 Data lines:D0-D15 + 5 control lines: CE#,OE#,WE#,RESET#,TRISTATE (optional:#RY-BY) + GND + VCC
1 chip: Spansion S29GL128N90TFIR2 or Samsung K8Q2815UQB-P14B




Samsung K9F1G08U0A-PIB0

productcode meaning: K - Memory 9 - NAND Flash

Spansion S29GL128N90TFIR2

Samsung K8Q2815UQB-PI4B

productcode meaning:
K - Memory
8 - NOR Flash
Q - Small Classification : Page Mode DDP
28 - Density : 128M, 8M / 16Bank / 8^8
15 - Dual Bank Boot Block (Bank1, Bank2) : 16M, 2M / 14M
U - Vcc : 3.0V / 3.3V (2.7V~3.6V)
Q - Device Type: Yop and Bottom Boot Block
B - Generation : 3rd Generation
-
P - Package : TSOP1 (Lead Free)
I - Temp : Industrial
4B - Speed : 60ns/25ns (Page)
56-pin TSOP1 Standard Type 14mm x 20mm


Pin Usage Remarks
1 NC No Connection
2 A22
3 A15
4 A14
5 A13
6 A12
7 A11
8 A10
9 A9
10 A8
11 A19
12 A20
13 WE Write Enable
14 RESET Reset
15 A21
16 WP/ACC Write Protect / Accelerated Program Operation
17 RD/BY Ready/Busy Output
18 A18
19 A17
20 A7
21 A6
22 A5
23 A4
24 A3
25 A2
26 A1
27 NC No Connection
28 NC No Connection
Pin Usage Remarks
29 VCCQ VccQ
30 NC No Connection
31 A0
32 CE Chip Enable
33 VSS Ground
34 OE Output Enable
35 DQ0
36 DQ8
37 DQ1
38 DQ9
39 DQ2
40 DQ10
41 DQ3
42 DQ11
43 Vcc Vcc (min 2.7V-max 3.6V / typ 3.0V)
44 DQ4
45 DQ12
46 DQ5
47 DQ13
48 DQ6 *OTP?
49 DQ14
50 DQ7 *OTP?
51 DQ15
52 VSS Ground
53 NC No Connection
54 A16
55 NC No Connection
56 NC No Connection


  • OTP Block Region : 256-word Flash memory region. The data DQ6=1 for customer locked and DQ7=1 for factory locked